GaN microwave electronics

被引：223

作者：

Mishra, UK ^{[1
]}

Wu, YF

Keller, BP

Keller, S

Denbaars, SP

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] WideGap Technol, Goleta, CA 93117 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 06期

关键词：

FET; GaN; HEMT; microwave; transistor;

D O I：

10.1109/22.681197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent progress of AlGaN/GaN-based power high-electron-mobility transistors (HEMT's) is reviewed, Remarkable improvement in performances was obtained through adoption of high Al contents in the AlGaN layer. The mobility in these modulation-doped structures is about 1200 cm(2).V-1.s(-1) at 300 K with sheet densities of over 1 x 10(13) cm(-2). The current density is over 1 A/mm with gate-drain breakdown voltages up to 280 V. F-t values up to 52 GHz have been demonstrated. Continuous wave (CW) power densities greater than 3 W/mm at 18 GHz have been achieved.

引用

页码：756 / 761

页数：6

共 9 条

[1] A 1.45-W/MM, 30-GHZ INP-CHANNEL POWER HEMT [J].

AINA, O ;

BURGESS, M ;

MATTINGLY, M ;

MEERSCHAERT, A ;

OCONNOR, JM ;

TONG, M ;

KETTERSON, A ;

ADESIDA, I .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) :300-302

[2]

AKATAS O, 1997, IEEE ELECTR DEVICE L, V18, P293

[3] MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN GALLIUM NITRIDE [J].

GELMONT, B ;

KIM, K ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1818-1821

[4] PULSE-DOPED ALGAAS INGAAS PSEUDOMORPHIC MODFETS [J].

MOLL, N ;

HUESCHEN, MR ;

FISCHERCOLBRIE, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :879-886

[5]

SRIRAM S, 1997, 55 DEV RES C BOULD C

[6] Measured microwave power performance of AlGaN/GaN MODFET [J].

Wu, YF ;

Keller, BP ;

Keller, S ;

Kapolnek, D ;

Denbaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (09) :455-457

[7] Short channel AlGaN/GaN MODFET's with 50-GHz f(T) and 1.7-W/mm output-power at 10 GHz [J].

Wu, YF ;

Keller, BP ;

Keller, S ;

Nguyen, NX ;

Le, M ;

Nguyen, C ;

Jenkins, TJ ;

Kehias, LT ;

Denbaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :438-440

[8] Short-channel Al0.5Ga0.5N/GaN MODFETs with power density >3W/mm at 18GHz [J].

Wu, YF ;

Keller, BP ;

Fini, P ;

Pusl, J ;

Le, M ;

Nguyen, NX ;

Nguyen, C ;

Widman, D ;

Keller, S ;

Denbaars, SP ;

Mishra, UK .

ELECTRONICS LETTERS, 1997, 33 (20) :1742-1743

[9] Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V [J].

Wu, YF ;

Keller, S ;

Kozodoy, P ;

Keller, BP ;

Parikh, P ;

Kapolnek, D ;

Denbaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (06) :290-292

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