Direct intensity modulation of resonant-tunneling-diode terahertz oscillator up to ∼30 GHz

被引：28

作者：

Ikeda, Yu ^{[1
]}

Kitagawa, Seiichirou ^{[1
]}

Okada, Kengo ^{[1
]}

Suzuki, Safumi ^{[2
]}

Asada, Masahiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 03期

基金：

日本科学技术振兴机构;

关键词：

terahertz oscillators; terahertz communications; resonant tunneling diode; high-frequency direct modulation; TECHNOLOGIES; THZ;

D O I：

10.1587/elex.12.20141161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed and fabricated resonant-tunneling-diode (RTD) terahertz (THz) oscillators with a structure for high-frequency direct modulation, which is useful for high-capacity THz wireless communications. The oscillator is composed of RTD and slot antenna. To obtain high cut-off frequency of direct modulation, the capacitance of the metal-insulator-metal (MIM) layer forming the slot antenna was reduced without decrease in THz output power which was a problem in the previous structure. A cut-off frequency of 30 GHz was obtained in direct intensity modulation of the device oscillating at 350 GHz with the reduced MIM capacitance of 0.7 pF. Keywords: terahertz oscillators, terahertz communications, resonant tunneling diode, high-frequency direct modulation

引用

页数：10

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