Enhancement of the thermoelectric performance of n - type Bi2O2Se by Ce4+ doping

被引：28

作者：

Hong, H. Y. ^{[1
]}

Kim, D. H. ^{[1
]}

Won, S. O. ^{[2
]}

Park, K. ^{[1
]}

机构：

[1] Sejong Univ, Fac Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea

[2] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 02792, South Korea

来源：

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T | 2021年 / 15卷

基金：

新加坡国家研究基金会;

关键词：

Sintering; Synthesis; Microstructure; X-ray diffraction; Thermoelectric properties; Ceramics; THERMAL TRANSPORT-PROPERTIES; CARRIER CONCENTRATION; GRAIN-GROWTH; THIN-FILMS; CERAMICS; MOBILITY; PBTE; BICUSEO; ENERGY; OXIDE;

D O I：

10.1016/j.jmrt.2021.10.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the effect of Ce4+ doping on the thermoelectric properties of Bi2-xCexO2Se (0 < x < 0.15). Bi(2-x)CexO(2)Se crystallizes in the tetragonal crystal structure (I4/mmm space group). The doping of Ce4+ for Bi3+ leads to a significant enhancement of electrical conductivity, which is mainly attributed to the increased electron concentration and the decreased band-gap energy. The Ce4+ doping decreases the absolute Seebeck coefficient and increases the thermal conductivity. The highest value of ZT (0.26) is obtained for Bi1.9Ce0.1O2Se at 773 K, which is 37% larger than that of pure Bi2O2Se (0.19) at 773 K. We believe that the Ce4+ doping is highly effective to enhance the thermoelectric properties of Bi2O2Se. (C) 2021 The Author(s). Published by Elsevier B.V.

引用

页码：4161 / 4172

页数：12

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