Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

被引：3

作者：

Jiao Bao-Chen ^{[1
]}

Zhang Xiao-Dan ^{[1
]}

Wei Chang-Chun ^{[1
]}

Sun Jian ^{[1
]}

Ni Jian ^{[1
]}

Zhao Ying ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 03期

基金：

中国国家自然科学基金;

关键词：

indium doped zinc oxide thin film; ultrasonic spray pyrolysis; double-layer structure; solar cell; CHEMICAL-VAPOR-DEPOSITION; GROWTH; TCO;

D O I：

10.1088/1674-1056/20/3/037306

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 x 10(-3) Omega . cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58 x 10(-3) Omega . cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.

引用

页数：9

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