Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation

被引：23

作者：

Harada, Naohisa ^{[2
,3
]}

Hori, Yujin ^{[2
,3
]}

Azumaishi, Naoki ^{[2
,3
]}

Ohi, Kota ^{[2
,3
]}

Hashizume, Tamotsu ^{[1
]}

机构：

[1] Japan Sci & Technol Agcy JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan

[2] Hokkaido Univ, Grad Sch Informat & Sci Technol, Sapporo, Hokkaido 0608628, Japan

[3] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

关键词：

GAN;

D O I：

10.1143/APEX.4.021002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A selective electrochemical oxidation has been applied to the AlGaN surface to fabricate a recessed-oxide-gate structure for normally-off AlGaN/GaN high-electron-mobility transistors (HEMTs). We observed bias-dependent oxidation current characteristics peculiar to the AlGaN/GaN heterostructure. A flat interface between the oxide and AlGaN was confirmed by cross-sectional transmission electron microscopy. The selective formation of the recessed oxide allowed the local depletion of two-dimensional electron gas at the AlGaN/GaN interface and thus the achievement of normally-off operation. The recessed-oxide-gate HEMT with the oxide thickness of 20nm showed good gate control of drain current with the threshold voltage of +1.2 V. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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