Estimation of dimensional criticality for direct to indirect exciton transition in a double Quantum Well: Through exciton diamagnetism

被引：2

作者：

Vignesh, G. ^{[1
]}

Nithiananthi, P. ^{[1
]}

机构：

[1] Gandhigram Rural Inst Deemed Be Univ, Dept Phys, Nanostruct Lab, Gandhigram 624302, Tamil Nadu, India

来源：

MATERIALS TODAY COMMUNICATIONS | 2019年 / 21卷

关键词：

Diamagnetic susceptibility; Double Quantum Well; Direct and indirect excitons; Critical dimension; Size-dependent screening;

D O I：

10.1016/j.mtcomm.2019.100725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton diamagnetism is calculated to estimate theoretically the critical well dimension for the transition of direct exciton (DX) to indirect (IDX) in a GaAs/Al0.3Ga0.7As symmetric Double Quantum Well (DQW) by variation ansatz. By tuning the confinement layer widths, the critical well size at which the constituent carriers of DX breaks up and transforms to indirect is observed through the sudden decrease of diamagnetic susceptibility (chi(Dia)) of DX. The structural influence on the binding of DX and IDX with (i) light hole (LH) and (ii) heavy hole (HH) has been numerically estimated in the present work. The intricate role of LO phonons in the formation of exciton is accounted through the size-dependent dielectric screening.

引用

页数：4

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