High luminescence quantum efficiency of Eu3+-doped SnO2-SiO2 glasses due to excitation energy transfer from nano-sized SnO2 crystals
被引:3
作者:
Hayakawa, T
论文数: 0引用数: 0
h-index: 0
机构:
Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 4668555, JapanNagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
Hayakawa, T
[1
]
论文数: 引用数:
h-index:
机构:
Nogami, M
[1
]
机构:
[1] Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
Eu3+;
SnO2;
nanocrystals;
energy transfer;
quantum size effect;
sol-gel method;
D O I:
10.1016/j.stam.2004.07.004
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The strong Eu3+ photoluminescence in xSnO(2)-(100-x)SiO2 derived by the sol-gel method was reported. It was shown that Eu3+ ions were embedded in SnO2 nanocrystals (tetragonal, rutile) surrounded by a SiO2 glass matrix. Time-resolved photoluminescence spectra and excitation spectra revealed that Eu3+ ions could receive excitation energy from electron-hole pairs in SnO2 semiconductor nanocrystal, whose band-gap energy shifted to the higher energy side due to the quantum size effect, and was tuned to an optimum frequency for energy transfer to Eu3+ ions. Absolute quantum luminescence efficiencies were found to be 60.5 (internal) and 26.7% (external). (c) 2004 Published by Elsevier Ltd.