Effects of sputtering pressure and Al buffer layer thickness on properties of AZO films grown by rf magnetron sputtering

被引:36
作者
Tseng, C. H. [2 ]
Wang, W. H. [1 ]
Chang, H. C. [1 ]
Chou, C. P. [2 ]
Hsu, C. Y. [1 ]
机构
[1] Lunghwa Univ Sci & Technol, Dept Mech Engn, Tao Yuan, Taiwan
[2] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu, Taiwan
关键词
Transparent conductive oxide; Al buffer layer; Rf magnetron sputtering; Electrical resistivity; ZNO THIN-FILMS; ROOM-TEMPERATURE; DEPOSITION;
D O I
10.1016/j.vacuum.2010.06.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent and conductive Al-doped (2 wt.%) zinc oxide (AZO) films were deposited on inexpensive soda-lime glass substrates by using rf magnetron sputtering at room temperature. This study analyzed the effects of argon sputtering pressure, which varied in the range from 0.46 to 2.0 Pa, on the morphological, electrical and optical properties of AZO films. The only (0 0 2) diffraction peak of the film were observed at 20 similar to 34.45 degrees, exhibiting that the AZO films had hexagonal ZnO wurtzite structure, and a preferred orientation with the c-axis perpendicular to the substrate. By applying a very thin aluminum buffer layer with the thickness of 2 nm, findings show that the electrical resistivity was 9.46 x 10(-4) Omega-cm, and the average optical transmittance in the visible part of the spectra was approximately 81%. Furthermore, as for 10 nm thick buffer layer, the electrical resistivity was lower, but the transmittance was decreased. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:263 / 267
页数:5
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