Electrochemical carbon nanotube field-effect transistor

被引：0

作者：

Krüger, M

Buitelaar, MR

Nussbaumer, T

Schönenberger, C

Forró, L

机构：

[1] Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Genie Atom, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

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中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (E-F) shifts of order +/-1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with parallel toE(F)parallel to approximate to 0.3-0.5 eV, corresponding to a doping level of approximate to 10(13) cm(-2). Hole-doping increases in the electrolyte. (C) 2001 American Institute of Physics.

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页码：1291 / 1293

页数：3

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