Low Temperature Chemical Vapor Deposition of Cuprous Oxide Thin Films Using a Copper(I) Amidinate Precursor

被引：30

作者：

Chua, Danny ^{[1
]}

Kim, Sang Bok ^{[3
]}

Li, Kecheng ^{[1
]}

Gordon, Roy ^{[1
,2
]}

机构：

[1] Harvard Univ, John A Paulson Sch Engn & Appl Sci, 29 Oxford St, Cambridge, MA 02138 USA

[2] Harvard Univ, Dept Chem & Chem Biol, 12 Oxford St, Cambridge, MA 02138 USA

[3] Seoul Natl Univ, Ctr Educ Res, 1 Gwanak Ro, Seoul 08826, South Korea

来源：

ACS APPLIED ENERGY MATERIALS | 2019年 / 2卷 / 11期

基金：

美国国家科学基金会;

关键词：

cuprous oxide; chemical vapor deposition; semiconductor; amidinate; precursor; thin film; photovoltaics; CU2O FILMS; OXYGEN; LAYER; EXCITONS; CUO;

D O I：

10.1021/acsaem.9b01683

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cuprous oxide (Cu2O) thin films were grown by chemical vapor deposition (CVD) using precursors (N,N'- di-sec-butylacetamidinato)copper(I) and degassed water at low substrate temperatures of 125-225 degrees C. Despite being a widely studied material, vapor deposition of Cu2O faces numerous challenges in avoiding material agglomeration, in obtaining high phase purity, and in limiting the process temperature to below 200 degrees C for temperature sensitive applications. We deposited pinhole-free single-phase oxide films that exhibit Hall mobilities up to 17 cm(2) V-1 s(-1) and wide band gaps exceeding 2.6 eV that are free from contaminants such as nitrogen, carbon, and cupric oxide (CuO). With good control of growth parameters (source temperature, substrate temperature, and flow rate of carrier gas, etc.), the film morphologies could be tuned to achieve either smooth, pinhole-free coatings or highly crystalline thin films with rough surfaces that are suitable for applications to solar cells.

引用

页码：7750 / 7756

页数：13

共 37 条

[11] RELAXED EXCITONS IN CU2O [J].