Photoluminescence probed minority processes in La2/3Sr1/3MnO3 thin films

被引：1
作者：
Guo, H. Y. [1 ]
Liang, Ching-Tarng [2 ]
Chang, Yia-Chung [2 ]
Lin, J. G. [1 ]
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan
[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
来源：
JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 09期
关键词：
Electronic structure; Photoluminescence; Colossal magnetoresistance; ELECTRONIC-STRUCTURE; CONDUCTIVITY;
D O I：
10.1016/j.jlumin.2012.04.017
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
La2/3Sr1/3MnO3 thin films are studied with temperature variable photoluminescence (PL) spectroscopy. Two emission peaks are assigned to the minority carriers related transition processes. The temperature independent 2.526 eV peak is attributed to the charge transfer type inter-band transition, while the redshifted doublet peak around 1.686 eV to the spin flip process. Band structures are obtained within the density functional theory, which show the consistent band gaps with the PL data. The temperature dependence of the intensity of PL emission suggests that these minority carrier processes are relevant to polaron formation. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：2209 / 2212
页数：4
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