Electrical characterization of the MOS (Metal-oxide-semiconductor) system: High mobility substrates

被引：8

作者：

Lin, Dennis ^{[1
]}

Brammertz, Guy ^{[1
]}

Sioncke, Sonja ^{[1
]}

Nyns, Laura ^{[1
]}

Alian, Alireza ^{[1
]}

Wang, Wei-E ^{[1
]}

Heyns, Marc ^{[1
]}

Caymax, Matty ^{[1
]}

Hoffmann, Thomas ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) | 2011年 / 34卷 / 01期

关键词：

D O I：

10.1149/1.3567716

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Recent developments on CMOS-driven III-V and Ge MOS (Metal-oxide-semiconductor) technologies provide new opportunities in advancing the performance envelope of MOS device as well as the relevant electrical characterization techniques. Understanding the capacitance-voltage (CV) and conductance voltage (GV) responses of the III-V/Ge MOS devices can lead to better assessments of the oxide-semiconductor material systems and more accurate performance predictions.

引用

页码：1065 / 1070

页数：6

共 9 条

[1] Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures [J].