Features of Low-Temperature Spectra of Photoluminescence of Zn0.9Cd0.1O Solid Solutions Grown Under Different Technological Conditions

被引:0
作者
Shtepliuk, I. I. [1 ]
Lashkaryov, G. V.
Lazorenko, V. J.
Khomyak, V. V.
Ievtushenko, A. I.
Thach, V. M.
Marianchuk, P. D.
Timofeeva, I. I.
Myroniuk, D. V.
Korenyuk, P. I.
机构
[1] Natl Acad Sci Ukraine, IF Frantsevich Inst Problems Mat Sci, MSP, UA-03680 Kiev, Ukraine
来源
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2011年 / 33卷
关键词
MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; ZNO; FILMS; EXCITON; DEFECTS;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In a given paper, effects of both the magnetron power and the gas ratio of Ar/O-2 on the microstructure and the low-temperature photoluminescence spectra (PL) of the Zn0.9Cd0.1O films are investigated. Single-phase and polycrystalline Zn0.9Cd0.1O films are deposited by direct current magnetron sputtering at a substrate temperature of 250 degrees C. X-ray diffraction (XRD) measurements reveal a strong influence of technological deposition parameters on the films' microstructure. The Williamson-Hall method allows determining the size of coherent-scattering region for all the samples. As revealed, the increase in the argon partial pressure leads to an improvement of crystallinity of ternary solutions, while increasing the power of magnetron causes the deterioration of structure. The features of low-temperature luminescence spectra of the Zn0.9Cd0.1O ternary solutions are discussed in terms of spontaneous fluctuations.
引用
收藏
页码:221 / 233
页数:13
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共 26 条
  • [1] A comparative analysis of deep level emission in ZnO layers deposited by various methods
    Ahn, Cheol Hyoun
    Kim, Young Yi
    Kim, Dong Chan
    Mohanta, Sanjay Kumar
    Cho, Hyung Koun
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
  • [2] High temperature excitonic stimulated emission from ZnO epitaxial layers
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1038 - 1040
  • [3] Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays
    Cao, BQ
    Cai, WP
    Zeng, HB
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (16)
  • [4] Low-temperature wafer-scale production of ZnO nanowire arrays
    Greene, LE
    Law, M
    Goldberger, J
    Kim, F
    Johnson, JC
    Zhang, YF
    Saykally, RJ
    Yang, PD
    [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) : 3031 - 3034
  • [5] X-RAY LINE BROADENING IN METALS
    HALL, WH
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1949, 62 (359): : 741 - 743
  • [6] Native point defects in ZnO
    Janotti, Anderson
    Van de Walle, Chris G.
    [J]. PHYSICAL REVIEW B, 2007, 76 (16)
  • [7] JIAO SJ, 2006, APPL PHYS LETT, V81, P1830
  • [8] First-principles study of native point defects in ZnO
    Kohan, AF
    Ceder, G
    Morgan, D
    Van de Walle, CG
    [J]. PHYSICAL REVIEW B, 2000, 61 (22) : 15019 - 15027
  • [9] Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique
    Liu, W
    Gu, SL
    Ye, JD
    Zhu, SM
    Liu, SM
    Zhou, X
    Zhang, R
    Shi, Y
    Zheng, YD
    Hang, Y
    Zhang, CL
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (09)
  • [10] Bound exciton and donor-acceptor pair recombinations in ZnO
    Meyer, BK
    Alves, H
    Hofmann, DM
    Kriegseis, W
    Forster, D
    Bertram, F
    Christen, J
    Hoffmann, A
    Strassburg, M
    Dworzak, M
    Haboeck, U
    Rodina, AV
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (02): : 231 - 260