Modeling thermal laser stimulation

被引：13

作者：

Beaudoin, F

Chauffleur, X

Fradin, JP

Perdu, P

Desplats, R

Lewis, D

机构：

[1] CNES THALES Lab, F-31401 Toulouse, France

[2] Epsilon Ingn Calif, F-31319 Labege, France

[3] Univ Bordeaux 1, IXL, F-33405 Talence, France

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 9-10期

关键词：

D O I：

10.1016/S0026-2714(01)00202-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3D finite element ANSYS model of the thermal laser stimulation (OBIRCH, TIVA) effect is presented. Using this model we will answer questions related to the localization and the rapidity of laser heating. Furthermore, the temperature increase and the resistance change for a 1 mum aluminum line will be given. Thermal laser stimulation results on a test structure are compared with the simulations. All the conclusions obtained in this study underline the ability of thermal laser stimulation to precisely localize metallic short type faults in ICs. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1477 / 1482

页数：6

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