Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

被引：41

作者：

Jokubavicius, Valdas ^{[1
]}

Yazdi, Gholam R. ^{[1
]}

Liljedahl, Rickard ^{[1
]}

Ivanov, Ivan G. ^{[1
]}

Sun, Jianwu ^{[1
]}

Liu, Xinyu ^{[1
]}

Schuh, Philipp ^{[2
]}

Wilhelm, Martin ^{[2
]}

Wellmann, Peter ^{[2
]}

Yakimova, Rositsa ^{[1
]}

Syvajarvi, Mikael ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, Semicond Mat Div, S-58183 Linkoping, Sweden

[2] Univ Erlangen Nurnberg, Mat Dept I meet 6, Crystal Growth Lab, D-91058 Erlangen, Germany

来源：

CRYSTAL GROWTH & DESIGN | 2015年 / 15卷 / 06期

基金：

瑞典研究理事会;

关键词：

LIQUID-SOLID MECHANISM; CF-PVT METHOD; HETEROEPITAXIAL GROWTH; SUBLIMATION EPITAXY; SILICON-CARBIDE; CRYSTALS; LAYERS; MESAS; CVD; SURFACES;

D O I：

10.1021/acs.cgd.5b00368

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigated the formation of structural defects in thick (similar to 1 mm) cubic silicon carbide (3C-SiC) layers grown on off-oriented 4H-SiC substrates via a lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the two-step growth process combined with a geometrically controlled lateral enlargement mechanism allows the formation of a single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution X-ray diffraction and low temperature photoluminescence measurements.

引用

页码：2940 / 2947

页数：8

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