Properties of thermal gadolinium oxide films on silicon

被引：10

作者：

Hong-Hsi, K ^{[1
]}

Chang, LB

Jeng, MJ

Kuei, PY

Horng, KY

机构：

[1] Natl Def Univ, Chung Cheng Inst Technol, Dept Elect Engn, Taoyuan 335, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

[3] St Johns & St Marys Inst Technol, Dept Elect Engn, Taipei 251, Taiwan

[4] Chung Shan Inst Sci & Technol, Taoyuan 325, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 5A期

关键词：

gadolinium (Gd) oxide film; X-ray diffraction (XRD); grain boundary; leakage property; thermal oxidation;

D O I：

10.1143/JJAP.44.3205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation and electrical characteristics of thermal gadolinium (Gd) oxide films were investigated. A good uniform interface formed by proper treatment was observed by transmission electron microscopy (TEM) examination. The dielectric constant of the thermal Gd oxide films was approximately 10 from capacitance-voltage measurements. The X-ray diffraction (XRD) pattern of the thermal Gd oxide (Gd2O3) films showed that they had a cubic structure. The Gd oxides that were oxidized at higher temperatures exhibited smaller grain boundaries than those oxidized at lower temperatures. The grain boundary size of the Gd oxides significantly affects the leakage property. A good Gd oxide quality can be obtained when the thermal oxidation temperature is above 900 degrees C.

引用

页码：3205 / 3208

页数：4

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