High-power rf oscillation induced in half-metallic Co2MnSi layer by spin-transfer torque

被引：28

作者：

Okura, R. ^{[1
]}

Sakuraba, Y. ^{[1
]}

Seki, T. ^{[1
]}

Izumi, K. ^{[1
]}

Mizuguchi, M. ^{[1
]}

Takanashi, K. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

关键词：

MICROWAVE OSCILLATIONS; DRIVEN;

D O I：

10.1063/1.3624470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The rf oscillation induced in a current-perpendicular-to-plane device with Co2MnSi (CMS) layers by spin-transfer torque was investigated to enhance the rf output power due to the large magnetoresistance (MR) ratio. A large MR ratio of 12.5% was obtained due to the large spin-polarization of CMS, and fundamental and second harmonic rf oscillations were clearly observed in the CMS layer. A high rf output power of 1.1 nW was achieved in spite of a small precession angle of 8.6 degrees. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624470]

引用

页数：3

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