Electronic structure of GaN(000(1)over-bar)-(1 x 1) surface

被引：20

作者：

Kowalski, BJ

Iwanowski, RJ

Sadowski, J

Kowalik, IA

Kanski, J

Grzegory, I

Porowski, S

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Univ Copenhagen, Oersted Lab, DK-2100 Copenhagen, Denmark

[3] Chalmers, Dept Phys, S-41296 Gothenburg, Sweden

[4] Gothenburg Univ, S-41296 Gothenburg, Sweden

[5] Polish Acad Sci, High Pressure Res Ctr, PL-01141 Warsaw, Poland

来源：

SURFACE SCIENCE | 2004年 / 548卷 / 1-3期

关键词：

angle resolved photoemission; surface electronic phenomena (work function; surface potential; surface states; etc.); gallium nitride; low index single crystal surfaces;

D O I：

10.1016/j.susc.2003.11.010

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The (0 0 0 (1) over bar) (N-polar) (1 x 1) surface of bulk gallium nitride crystals has been investigated by means of angle-resolved photoemission spectroscopy. The surface was prepared by repeated cycles of Ar+ ion sputtering and annealing. The electronic band structure was explored along the Gamma-A and Gamma-K-M directions of the Brillouin zone, by measuring normal and off-normal photoemission spectra. A similar set of data was also collected for the same surface subjected to Ga deposition under MBE conditions. The identification of bulk and surface related spectral features was based on analysis of the acquired experimental data and supported by comparison with the results of available band structure calculations. The features characteristic of both (1 x 1) N-terminated and (1 x 1) Ga-adlayer terminated surface configurations were revealed for the surface under investigation. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：220 / 230

页数：11

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