High speed terahertz modulation from metamaterials with embedded high electron mobility transistors

被引：204

作者：

Shrekenhamer, David ^{[1
]}

Rout, Saroj ^{[2
]}

Strikwerda, Andrew C. ^{[3
]}

Bingham, Chris ^{[1
]}

Averitt, Richard D. ^{[3
]}

Sonkusale, Sameer ^{[2
]}

Padilla, Willie J. ^{[1
]}

机构：

[1] Boston Coll, Dept Phys, 140 Commonwealth Ave, Chestnut Hill, MA 02467 USA

[2] Tufts Univ, NanoLab, Medford, MA 02155 USA

[3] Boston Univ, Dept Phys, Boston, MA 02215 USA

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 10期

基金：

美国国家科学基金会;

关键词：

PLASMA-WAVES; RADIATION; RESONATORS; DC;

D O I：

10.1364/OE.19.009968

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a computational and experimental study of a novel terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz. Characterization is performed using a THz time-domain spectrometer (THz-TDS) and we demonstrate switching values over 30%, and THz modulation at frequencies up to 10 megahertz (MHz). Our results demonstrate the viability of incorporating metamaterials into mature semiconductor technologies and establish a new path toward achieving electrically tunable THz devices. (C) 2011 Optical Society of America

引用

页码：9968 / 9975

页数：8

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