Free carrier diffusion in 4H-SiC

被引：11

作者：

Grivickas, P

Martinez, A

Mikulskas, I

Grivickas, V

Tomasiunas, R

Linnros, J

Lindefelt, U

机构：

[1] Royal Inst Technol, Dept Solid State Elect, SE-16440 Stockholm, Sweden

[2] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2054 Vilnius, Lithuania

[3] ABB Corp Res, SE-72178 Vasteras, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

band-gap narrowing; degenerated statistics; transient grating;

D O I：

10.4028/www.scientific.net/MSF.353-356.353

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusion coefficient of free carriers in 4H-SiC is experimentally determined over a large injection range. For this purpose two transient gratings techniques are utilized to detect light-induced free-carrier diffusive motion employing the changes in the absorption coefficient or in the refractive index, respectively. At high-injections a smooth reduction of the ambipolar diffusivity is observed with a following sharp increase above 3.10(18) cm(-3). Theoretical calculations based on dynamic band-gap narrowing in the former case and degenerated statistics in the latter case yields a reasonable agreement with the experimental data.

引用

页码：353 / 356

页数：4

共 9 条

[1]

EICHLER HJ, 1986, SPRINGER SERIES OPTI, V50

[2] Free carrier diffusion measurements in epitaxial 4H-SiC with a Fourier transient grating technique: Injection dependence [J].