Size-dependent intrinsic radiative decay rates of silicon nanocrystals at large confinement energies

被引:137
作者
Sykora, Milan [1 ]
Mangolini, Lorenzo [2 ]
Schaller, Richard D. [1 ]
Kortshagen, Uwe [2 ]
Jurbergs, David [3 ]
Klimov, Victor I. [1 ]
机构
[1] Los Alamos Natl Lab, Div Chem, Los Alamos, NM 87545 USA
[2] Univ Minnesota, Dept Mech Engn, High Temperature & Plasma Lab, Minneapolis, MN 55444 USA
[3] Innovalight Inc, Santa Clara, CA 95054 USA
关键词
D O I
10.1103/PhysRevLett.100.067401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study ultrafast photoluminescence (PL) dynamics of Si nanocrystals (NCs). The early-time PL spectra (< 1 ns), which show strong dependence on NC size, are attributed to emission involving NC quantized states. The PL spectra recorded for long delays (> 10 ns) are almost independent of NC size and are likely due to surface-related recombination. Based on instantaneous PL intensities measured 2 ps after excitation, we determine intrinsic radiative rate constants for NCs of different sizes. These constants sharply increase for confinement energies greater than similar to 1 eV indicating a fast, exponential growth of the oscillator strength of zero-phonon, pseudodirect transitions.
引用
收藏
页数:4
相关论文
共 25 条
[11]   Silicon nanocrystals with ensemble quantum yields exceeding 60% [J].
Jurbergs, David ;
Rogojina, Elena ;
Mangolini, Lorenzo ;
Kortshagen, Uwe .
APPLIED PHYSICS LETTERS, 2006, 88 (23)
[12]   Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals [J].
Klimov, VI ;
McBranch, DW .
PHYSICAL REVIEW LETTERS, 1998, 80 (18) :4028-4031
[13]   Light from Si-nanoparticle systems - A comprehensive view [J].
Koch, F ;
PetrovaKoch, V .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 :840-846
[14]   Time-resolved area-normalized emission spectroscopy (TRANES): A novel method for confirming emission from two excited states [J].
Koti, ASR ;
Krishna, MMG ;
Periasamy, N .
JOURNAL OF PHYSICAL CHEMISTRY A, 2001, 105 (10) :1767-1771
[15]   Breakdown of the k-conservation rule in Si nanocrystals [J].
Kovalev, D ;
Heckler, H ;
Ben-Chorin, M ;
Polisski, G ;
Schwartzkopff, M ;
Koch, F .
PHYSICAL REVIEW LETTERS, 1998, 81 (13) :2803-2806
[16]  
Kovalev D, 1999, PHYS STATUS SOLIDI B, V215, P871, DOI 10.1002/(SICI)1521-3951(199910)215:2<871::AID-PSSB871>3.0.CO
[17]  
2-9
[18]   POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].
LEHMANN, V ;
GOSELE, U .
APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858
[19]   Process for preparing macroscopic quantities of brightly photoluminescent silicon nanoparticles with emission spanning the visible spectrum [J].
Li, XG ;
He, YQ ;
Talukdar, SS ;
Swihart, MT .
LANGMUIR, 2003, 19 (20) :8490-8496
[20]   Surface functionalization of silicon nanoparticles produced by laser-driven pyrolysis of silane followed by HF-HNO3 etching [J].
Li, XG ;
He, YQ ;
Swihart, MT .
LANGMUIR, 2004, 20 (11) :4720-4727