Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation

被引：21

作者：

Kim, KiHyun ^{[1
,2
]}

Hong, JinKi ^{[1
]}

Kim, SunUng ^{[1
]}

机构：

[1] Korea Univ, Dept Display & Semicond Phys, ChungNam 339800, South Korea

[2] Samil Pharm Co, Div Med Sensors, Seoul 136700, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 01期

关键词：

surface processes; Bridgman technique; semiconducting II-IV materials;

D O I：

10.1016/j.jcrysgro.2007.10.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CdTe0:9Se0:1:Cl crystals doped with chlorine at 5 x 10(17) cm(-3) level were grown by the vertical Bridgman method. The composition of Se throughout the ingot was nearly constant at x = 0.110+/-0.016. The electrical resistivity of CdTeSe:Cl was 4.5 x 10(9)Omega cm. Chemical etchants were employed to obtain stoichiometric and flat surfaces for electrode deposition, and the effects of the etchants on CdTeSe surfaces were analyzed by photoluminescence (PL) and AFM with different bromine concentrations and etching times. The mobility-lifetime products of electron and hole in CdTeSe:Cl crystals were of the order of similar to 10(-2) cm(2)/V and its values are greater than those for CdTe crystals. The energy resolution of a CdTeSe:Cl detector was tested using a Am-241 radioactive source. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：91 / 95

页数：5

共 9 条

[1] Lattice thermal expansion of CdTe0.9Se0.1 solid solution [J].

Al-Heniti, S ;

Al-Hajry, A .

JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 387 (1-2) :L5-L7

[2] COMPARISON OF CDTE, CD0.9ZN0.1TE AND CDTE0.9SE0.1 CRYSTALS - APPLICATION FOR GAMMA-RAY AND X-RAY-DETECTORS [J].

FIEDERLE, M ;

EBLING, D ;

EICHE, C ;

HOFMANN, DM ;

SALK, M ;

STADLER, W ;

BENZ, KW ;

MEYER, BK .

JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :529-533

[3] APPLICATION OF RANDOM-ELEMENT ISODISPLACEMENT MODEL TO LONG-WAVELENGTH OPTICAL PHONONS IN CDSECHITE1-CHIMIXED CRYSTALS [J].

GORSKA, M ;

NAZAREWICZ, W .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 65 (01) :193-202

[4] eThe surface passivation of Cd1-xZnxTe as to ZnS thickness and pre-heating [J].

Kim, YH ;

Kim, SH ;

Kim, IJ ;

An, SY ;

Kim, KH .

CURRENT APPLIED PHYSICS, 2005, 5 (04) :392-396

[5] Dark noise currents and energy resolution of CdZnTe spectrometers [J].

Nemirovsky, Y ;

Asa, G ;

Jakobson, CG ;

Ruzin, A ;

Gorelik, J .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) :800-806

[6] Study of contacts to CdZnTe radiation detector [J].

Nemirovsky, Y ;

Ruzin, A ;

Asa, G ;

Gorelik, Y ;

Li, L .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) :756-764

[7] Interfacial chemistry and the performance of bromine-etched CdZnTe radiation detector devices [J].

Rouse, AA ;

Szeles, C ;

Ndap, JO ;

Soldner, SA ;

Parnham, KB ;

Gaspar, DJ ;

Engelhard, MH ;

Lea, AS ;

Shutthanandan, SV ;

Thevuthasan, TS ;

Baer, DR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (04) :2005-2009

[8] Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe [J].

Wei, SH ;

Zhang, SB .

PHYSICAL REVIEW B, 2002, 66 (15) :1-10

[9] PURIFICATION OF CDTE FROM TELLURIUM-RICH SOLUTIONS [J].

ZANIO, K .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :327-351

← 1 →