Decomposition of InN at high pressures and temperatures and its thermal instability at ambient conditions

被引:11
作者
Saitoh, H. [1 ]
Utsumi, W. [1 ]
Aoki, K. [1 ]
机构
[1] Japan Atom Energy Agcy, Synchrotron Radiat Res Ctr, Mikazuki, Hyogo 6795148, Japan
关键词
phase equilibria; nitrides; semiconducting III-V materials;
D O I
10.1016/j.jcrysgro.2007.10.037
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The pressure-temperature (p-T) relation was determined for the decomposition reaction of InN for a pressure range of 6.7-10.0 GPa and a temperature range of 890-1070 K. The decomposition p-T relation was used to calculate the standard enthalpy of formation of InN at 0.1 MPa and 298 K as -36.3 kJ/mol. Furthermore, this p-T relation was used to estimate the decomposition temperature at ambient pressure as 204K, which is significantly lower than those previously estimated from the decomposition data obtained at relatively low pressures and temperatures, but this value does agree with those determined by calorimetric methods. Moreover, solid InN was confirmed to be metastable under ambient conditions. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:473 / 476
页数:4
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