Low-Temperature Band Transport and Impact of Contact Resistance in Organic Field-Effect Transistors Based on Single-Crystal Films of Ph-BTBT-C10

被引：28
作者：
Cho, Joung-min [1 ,3 ]
Mori, Takehiko [2 ]
机构：
[1] Tokyo Inst Technol, Dept Organ & Polymer Mat, 2-12-1 Ookayama, Tokyo 1528552, Japan
[2] JST, ACT C, Kawaguchi, Saitama 3320012, Japan
[3] Samsung Elect, Display R&D Grp Mobile Commun Business, Suwon 16677, Gyeonggi Do, South Korea
来源：
PHYSICAL REVIEW APPLIED | 2016年 / 5卷 / 06期
关键词：
HIGH-MOBILITY; MOLECULAR-STRUCTURE; ELECTRON-TRANSPORT; HIGH-PERFORMANCE; SEMICONDUCTOR; DISORDER; DOMAINS; SURFACE;
D O I：
10.1103/PhysRevApplied.5.064017
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transistors based on single-crystal films of 2-decyl-7-phenyl-[1] benzothieno[3,2-b][1] benzothiophene (Ph-BTBT-10) fabricated using the blade-coating method are investigated by the four-probe method down to low temperatures. The four-probe mobility is as large as 18 cm(2)/Vs at room temperature, and increases to 45 cm(2)/Vs at 80 K. At 60 K the two-probe mobility drops abruptly by about 50%, but the mobility drop is mostly attributed to the increase of the source resistance. The carrier transport in the present single-crystal film is regarded as essentially bandlike down to 30 K.
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页数：8
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