Microwave plasma nitridation of silicon dioxide on strained Si

被引：2

作者：

Bera, LK ^{[1
]}

Banerjee, HD ^{[1
]}

Ray, SK ^{[1
]}

Mukhopadhyay, M ^{[1
]}

Maiti, CK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.122204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of ultrathin (<100 Angstrom) nitrided SiO2 on strained Si using microwave O-2/N2O/NH3 plasma is reported. X-ray photoelectron spectroscopy results indicate a nitrogen-rich layer at the strained Si/SiO2 interface. The electrical properties of the nitrided oxides have been characterized using a metal-insulator-semiconductor structure. N2O plasma treatment of O-2/NH3 nitrided SiO2 results in a lower insulator charge density (1.2x10(11) cm(-2)) and a higher breakdown voltage. (C) 1998 American Institute of Physics.

引用

页码：1559 / 1561

页数：3

共 23 条

[1] Oxidation of strained Si in a microwave electron cyclotron resonance plasma [J].

Bera, LK ;

Mukhopadhyay, M ;

Ray, SK ;

Nayak, DK ;

Usami, N ;

Shiraki, Y ;

Maiti, CK .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :217-219

[2] Electrical properties of oxides grown on strained Si using microwave N2O plasma [J].

Bera, LK ;

Ray, SK ;

Nayak, DK ;

Usami, N ;

Shiraki, Y ;

Maiti, CK .

APPLIED PHYSICS LETTERS, 1997, 70 (01) :66-68

[3] EFFECTS OF NH3 NITRIDATION ON OXIDES GROWN IN PURE N2O AMBIENT [J].

BHAT, M ;

YOON, GW ;

KIM, J ;

KWONG, DL ;

ARENDT, M ;

WHITE, JM .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2116-2118

[4] TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES [J].

FITZGERALD, EA ;

XIE, YH ;

GREEN, ML ;

BRASEN, D ;

KORTAN, AR ;

MICHEL, J ;

MII, YJ ;

WEIR, BE .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :811-813

[5] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT [J].

FUKUDA, H ;

ARAKAWA, T ;

OHNO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2333-L2336

[6] A SINGLE-FREQUENCY APPROXIMATION FOR INTERFACE-STATE DENSITY DETERMINATION [J].

HILL, WA ;

COLEMAN, CC .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :987-993

[7]

Hwang H., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P421, DOI 10.1109/IEDM.1990.237142

[8] ANOMALOUS STRAIN RELAXATION IN SIGE THIN-FILMS AND SUPERLATTICES [J].

LEGOUES, FK ;

MEYERSON, BS ;

MORAR, JF .

PHYSICAL REVIEW LETTERS, 1991, 66 (22) :2903-2906

[9] EFFECTS OF N2O ANNEAL AND REOXIDATION ON THERMAL OXIDE CHARACTERISTICS [J].

LIU, ZH ;

WANN, HJ ;

KO, PK ;

HU, CM ;

CHENG, YC .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (08) :402-404

[10] IMPROVED ULTRATHIN OXYNITRIDE FORMED BY THERMAL NITRIDATION AND LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION PROCESS [J].

MAITI, B ;

HAO, MY ;

LEE, I ;

LEE, JC .

APPLIED PHYSICS LETTERS, 1992, 61 (15) :1790-1792

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