Molecular precursor of oxygen on Si(111)7x7 surface

被引：11
作者：
Sakamoto, K
Suto, S
Uchida, W
机构：
[1] Department of Physics, Faculty of Science, Tohoku University
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
electron energy loss spectroscopy; oxygen; silicon;
D O I：
10.1016/0039-6028(96)00213-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated the molecular precursor of oxygen on Si(111)7 x 7 surface at 1 and 2 L coverage using high resolution electron energy lass spectroscopy (HREELS) at room temperature. The time dependence of the energy loss intensity due to the O-O stretching mode al 154 meV shows that the lifetime of the molecular precursor of oxygen is 530 min. Taking into account the ESDIAD pattern of the molecular precursor and the same lifetime measured by Sakamoto et al. [Surf Sci. 306 (1994) 93], we conclude that the molecular precursor adsorbs at the on-top site of the Si(111) surface. We also discuss the origin of the intrinsic lifetime.
引用
收藏
页码：514 / 517
页数：4
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