Ca1-2xEuxLixMoO4:: A novel red phosphor for solid-state lighting based on a GaN LED

被引：109

作者：

Wang, JG ^{[1
]}

Jing, XP

Yan, CH

Lin, LH

机构：

[1] Peking Univ, Coll Chem & Mol Engn, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China

[2] Wenzhou Normal Univ, Coll Chem & Mat Sci, Wenzhou 325027, Peoples R China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 03期

关键词：

D O I：

10.1149/1.1856924

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel red phosphor Ca1-2xEuxLixMoO4 with high performance is reported. Under the excitation of 254 nm UV light, its, luminescent intensity is comparable to that of the commercial red phosphor Y2O3:Eu3+. With high Eu3+ concentration, the phosphor has strong excitation due to f-f transitions of Eu3+ appearing around 395 nm. Thus, it is a promising material for solid-state lighting based on GaN light-emitting diode (LED). (c) 2005 The Electrochemical Society. [DOI: 10.1149/1.1856924] All rights reserved.

引用

页码：G186 / G188

页数：3

共 25 条

[1] MULTIPHONON NONRADIATIVE RELAXATION FROM HIGH-LYING LEVELS OF ND-3+ IONS IN FLUORIDE AND OXIDE LASER MATERIALS [J].

BASIEV, TT ;

DERGACHEV, AY ;

ORLOVSKII, YV ;

PROKHOROV, AM .

JOURNAL OF LUMINESCENCE, 1992, 53 (1-6) :19-23

[2] Optical spectroscopy of CaMoO4:Dy3+ single crystals [J].

Cavalli, E ;

Bovero, E ;

Belletti, A .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (20) :5221-5228

[3] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].

Chang, SJ ;

Kuo, CH ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Chen, JF ;

Tsai, JM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :744-748

[4] CRYSTAL STRUCTURE REFINEMENT OF SRMOO4, SRWO4, CAMOO4, AND BAWO4 BY NEUTRON DIFFRACTION [J].

GURMEN, E ;

DANIELS, E ;

KING, JS .

JOURNAL OF CHEMICAL PHYSICS, 1971, 55 (03) :1093-&

[5] AlGaN/GaN quantum well ultraviolet light emitting diodes [J].

Han, J ;

Crawford, MH ;

Shul, RJ ;

Figiel, JJ ;

Banas, M ;

Zhang, L ;

Song, YK ;

Zhou, H ;

Nurmikko, AV .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1688-1690

[6] 292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base [J].

Hanlon, A ;

Pattison, PM ;

Kaeding, JF ;

Sharma, R ;

Fini, P ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (6B) :L628-L630

[7]

Kaufmann U, 2001, PHYS STATUS SOLIDI A, V188, P143, DOI 10.1002/1521-396X(200111)188:1<143::AID-PSSA143>3.0.CO

[8]

2-0

[9] n-UV plus blue/green/red white light emitting diode lamps [J].

Kuo, CH ;

Sheu, JK ;

Chang, SJ ;

Su, YK ;

Wu, LW ;

Tsai, JM ;

Liu, CH ;

Wu, RK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B) :2284-2287

[10] High-power UV InCaN/AlGaN double-heterostructure LEDs [J].

Mukai, T ;

Morita, D ;

Nakamura, S .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :778-781

← 1 2 3 →