Ballistic hot electron transport in graphene

被引：99
作者：
Tse, Wang-Kong [1 ]
Hwang, E. H. [1 ]
Sarma, S. Das [1 ]
机构：
[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期
关键词：
D O I：
10.1063/1.2956669
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time tau similar to 10(-2)-10(-1) ps and the mean free path l similar to 10-10(2) nm for electron densities n=10(12)-10(13) cm(-2). In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200 meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering. (C) 2008 American Institute of Physics.
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