Electrodeposition of SnS Thin film Solar Cells in the Presence of Sodium Citrate

被引:22
作者
Kihal, Rafiaa [1 ,2 ]
Rahal, Hassiba [1 ,3 ]
Affoune, Abed Mohamed [1 ]
Ghers, Mokhtar [4 ]
机构
[1] Univ 8 Mai 1945 Guelma, Fac Sci & Technol, Dept Genie Proc, Lab Anal Ind & Genie Mat, BP 401, Guelma 24000, Algeria
[2] Univ Abbes Laghrour Khenchela, BP 1252 Route Batna, Khenchela 40004, Algeria
[3] Univ 20 Aout 1955 Skikda, BP 26 Route El Hadaiek, Skikda 21000, Algeria
[4] Univ Badji Mokhtar, Dept Phys, Lab Etud Surfaces & Interfaces Mat Solide, Fac Sci, Annaba, Algeria
关键词
Tin sulfide; Sodium citrate; Electrodeposition; Cyclic voltammetry; Thin films; ELECTROCHEMICAL DEPOSITION; CATHODIC ELECTRODEPOSITION; PHOTOCONDUCTIVE PROPERTIES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; LEAD SULFIDE; TEMPERATURE; CUINSE2; EDTA;
D O I
10.33961/JECST.2017.8.3.206
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and 560 cm(-1). SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of 30 Omega cm, carrier concentration of 2.6 x 10(15) cm(-3) and mobility of 80 cm(2) V-1 s(-1).
引用
收藏
页码:206 / 214
页数:9
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