Deposition, defect and weak bond formation processes in a-Si:H

被引：17
作者：
Robertson, J [1 ]
Powell, MJ
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Philips Res Labs, Redhill RH1 5HA, Surrey, England
来源：
THIN SOLID FILMS | 1999年 / 337卷 / 1-2期
关键词：
deposition; weak bond formation; hydrogenated amorphous silicon;
D O I：
10.1016/S0040-6090(98)01171-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth of a-Si:H and the resulting weak bond and defect formation mechanism are analyzed in terms of the adsorbed SiH3 model of growth. It is found that this model describes the surface processes well, but it needs further development to correctly describe: the temperature dependence of the formation of defects and weak bonds, since the surface defect density decreases monotonically with temperature and does not show a minimum near 250 degrees C. We show that the experimentally observed increase in hydrogen content, weak bond and defect density at lower deposition temperatures can be accounted for by a hydrogen evolution reaction from H-2* sites. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码：32 / 36
页数：5
相关论文
共 26 条
[1]   Hydrogen solubility and network stability in amorphous silicon [J].
Acco, S ;
Williamson, DL ;
Stolk, PA ;
Saris, FW ;
vandenBoogaard, MJ ;
Sinke, WC ;
vanderWeg, WF ;
Roorda, S .
PHYSICAL REVIEW B, 1996, 53 (08) :4415-4427
[2]   Effects of the defect structure on hydrogen transport in amorphous silicon [J].
Acco, S ;
Beyer, W ;
vanFaassen, EE ;
vanderWeg, WF .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :2862-2868
[3]   Plasma post-hydrogenation of hydrogenated amorphous silicon and germanium [J].
Beyer, W ;
Zastrow, U .
AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :497-502
[4]  
BEYER W, 1996, J NONCRYST SOLIDS, V198, P40
[5]   DEFECT DENSITY AND HYDROGEN-BONDING IN HYDROGENATED AMORPHOUS-SILICON AS FUNCTIONS OF SUBSTRATE-TEMPERATURE AND DEPOSITION RATE [J].
CABARROCAS, PRI ;
BOUIZEM, Y ;
THEYE, ML .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 65 (05) :1025-1040
[6]  
FLEWITT A, 1998, MAT RES SOC S P
[7]   Tee effect of the amorphous silicon alpha-gamma transition on Thin Film Transistor performance [J].
French, ID ;
Deane, SC ;
Murley, DT ;
Hewett, J ;
Gale, IG ;
Powell, MJ .
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 :875-880
[8]   DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON [J].
GANGULY, G ;
MATSUDA, A .
PHYSICAL REVIEW B, 1993, 47 (07) :3661-3670
[9]  
GANGULY G, 1993, J NONCRYST SOLIDS, V164, P31
[10]   SURFACE-REACTIONS DURING THE A-SI-H GROWTH IN THE DIODE AND TRIODE GLOW-DISCHARGE REACTORS [J].
GUIZOT, JL ;
NOMOTO, K ;
MATSUDA, A .
SURFACE SCIENCE, 1991, 244 (1-2) :22-38
123