CMOS Resonant Oscillators RTWO based on Transmission Lines

被引：0

作者：

Armenta Marquez, A. K. ^{[1
]}

Linares Aranda, M. ^{[1
]}

Hernandez Martinez, L. ^{[1
]}

Calleja Arriaga, W. ^{[1
]}

机构：

[1] Natl Inst Astrophys Opt & Elect, Dept Elect, Luis Enrique Erro 1,Sta Maria Tonantzintla,POB 51, Puebla 72000, Mexico

来源：

2015 IEEE INTERNATIONAL AUTUMN MEETING ON POWER, ELECTRONICS AND COMPUTING (ROPEC) | 2015年

关键词：

oscillators; interconnects; integrated circuits;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Rotatory traveling wave oscillator (RTWO) is an innovative transmission-line technique for gigahertz-rate clock signal generation and/or distribution in high-performance microprocessors and systems communication. Currently the resonant RTWO are made in the upper level of metal of a typical CMOS process; however, due the increasing of metal levels in submicron manufacturing technologies, and operation frequencies at GHz range, the parasitic elements of interconnections increase also, causing a degradation in the performance of the RTWO. In this paper a set of 5GHz low-power resonant oscillators RTWO based on transmission lines are presented. Simulation results of the RTWO including discontinuities and without them designed with a UMC 180 nm Mixed-Mode Single-Poly 6-Metal (1P6M) P-Substrate, RFCMOS fabrication process, and the High Frequency Structural Simulator (HFSS) for extraction of parasitics, are shown.

引用

页数：5

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