Regrowth-Free GaN-Based Complementary Logic on a Si Substrate

被引：98

作者：

Chowdhury, Nadim ^{[1
]}

Xie, Qingyun ^{[1
]}

Yuan, Mengyang ^{[1
]}

Cheng, Kai ^{[2
]}

Then, Han Wui ^{[3
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

[2] Enkris Semicond Inc, Suzhou 215123, Peoples R China

[3] Intel Corp, Components Res Technol Dev Grp, Hillsboro, OR 97124 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 06期

关键词：

GaN CMOS; AlGaN; integrated circuit; high temperature operation; HALF-BRIDGE; CHANNEL;

D O I：

10.1109/LED.2020.2987003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates a complementary logic circuit (an inverter) on a GaN-on-Si platform without the use of regrowth technology. Both n-channel and p-channel GaN transistors are monolithically integrated on a GaN/AlGaN/GaN double heterostructure. N-channel FETs showenhancement-mode(E-mode) operationwith a threshold voltage around 0.2 V, ON-OFF current ratio of 10(7) and R-ON of 6 Omega center dot mm, while the p-channel FETs show E-mode operation with Vth of-1 V, ON-OFF current ratio of 104 and R-ON of 2.3 k Omega center dot mm. Complementary logic inverters fabricated with this technology yield a record maximum voltage gain of similar to 27 V/V at an input voltage of 0.59 V with V-DD = 5 V. Excellent transfer characteristic shave been obtained up to 300 degrees C operating temperatures, which demonstrates the suitability of this technology for low-power high-temperature electronic applications.

引用

页码：820 / 823

页数：4

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