UV-assisted safe etching route for the synthesis of Mo2CTx MXene from Mo-In-C non-MAX phase

We report the synthesis of Mo2CTx MXene from the Mo-In-C non-MAX phase using UV-assisted safe etching in phosphoric acid followed by ultrasonic exfoliation. The EDX and XPS spectra confirm the selective etching of indium from the non-MAX phase stoichiometry and formation of Mo2CTx MXene. The structural characterization using X-Ray diffraction revealed the Mo-In-C non-MAX phase and Mo2CTx MXene with crystallite sizes 37.26 +/- 0.56 nm and 46.89 +/- 0.70 nm, respectively. The morphology of the samples analyzed using FESEM, confirmed the formation of the multilayered and monolayer 2D Mo2CTx. A slight increase in the interplanar spacing (similar to 0.921 angstrom) was observed in HRTEM images for Mo2CTx with respect to Mo-In-C. The synthesis of Mo2C MXene from a non- MAX phase using a hydrogen fluoride-free safe etching root unlocks the wide opportunity for the industrial bulk production of MXenes.