Effects of SiNx passivation and gate metal roughness on the performance of on-plastic a-Si: H TFTs

被引：3

作者：

Chen, Jian Z. ^{[1
,2
]}

Cherenack, K. ^{[1
]}

Tsay, C. ^{[1
]}

Cheng, I-Chun ^{[1
,3
,4
]}

Wagner, Sigurd ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Natl Taiwan Univ, Inst Appl Math, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[4] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 02期

关键词：

D O I：

10.1149/1.2812443

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We studied a-Si: H thin film transistors (TFTs) with gate metal/substrate combinations, including Cr or Al/Cr gate metal on plain Kapton, and Cr/Al/Cr on SiNx passivated Kapton, to identify effects of roughness on TFT performance. TFTs with Cr/Al/Cr on SiNx passivated Kapton are superior in the essential characteristics: low threshold voltage, low gate leakage current I-gs, high on-current, high field-effect mobility, and steep subthreshold slope. The off-current is comparable to those of TFTs on plain Kapton. The Igs of all TFTs rises with increasing surface roughness of the gate metal. The major contributor to roughness is the metal film itself, not the substrate. (c) 2007 The Electrochemical Society.

引用

页码：H26 / H28

页数：3

共 50 条

[41] TEMPERATURE AND ACTIVE LAYER THICKNESS DEPENDENT STABILITY OF ON-PLASTIC a-Si:H THIN FILM TRANSISTORS FABRICATED AT 150°C [J].

Chen, Jian-Zhang ;

Cheng, I-Chun .

MicroNano2008-2nd International Conference on Integration and Commercialization of Micro and Nanosystems, Proceedings, 2008, :725-726

[42] Effect of Anneal Time on the Enhanced Performance of a-Si:H TFTs for Future Display Technology [J].

Indluru, A. ;

Venugopal, S. M. ;

Allee, D. R. ;

Alford, T. L. .

JOURNAL OF DISPLAY TECHNOLOGY, 2011, 7 (06) :306-310

[43] Charge emission induced transient leakage currents of a-Si:H and IGZO TFTs on flexible plastic substrates [J].

Smith, J. ;

Couture, A. ;

Allee, D. .

ELECTRONICS LETTERS, 2014, 50 (02) :105-106

[44] Temperature-dependent electrical characteristics of low temperature a-Si: H TFTs fabricated on plastic substrate [J].

Ho, K. Y. ;

Chen, P. C. ;

Cheng, C. H. ;

Cheng, C. C. ;

Yeh, Y. H. .

IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007, 2007, :315-318

[45] A comparison of processes and challenges between organic, a-Si:H, and oxide TFTs for active matrix backplanes on plastic [J].

Vornbrock, Alejandro de la Fuente ;

Almanza-Workman, Marcia ;

Dickin, Fraser ;

Elder, Richard E. ;

Garcia, Robert A. ;

Holland, Edward ;

Jackson, Warren ;

Jam, Mehrban ;

Jeans, Albert ;

Kim, Han-Jun ;

Luo, Hao ;

Kwon, Ohseung ;

Maltabes, John ;

Mei, Ping ;

Perlov, Craig ;

Rudin, John C. ;

Smith, Mark ;

Trovinger, Steven ;

Zhao, Lihua ;

Taussig, Carl P. .

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS, 2012, :57-60

[46] A comparison of processes and challenges between organic, a-Si:H, and oxide TFTs for active matrix backplanes on plastic [J].

De La Fuente Vornbrock, Alejandro ;

Almanza-Workman, Marcia ;

Dickin, Fraser ;

Elder, Richard E. ;

Garcia, Robert A. ;

Holland, Edward ;

Jackson, Warren ;

Jam, Mehrban ;

Jeans, Albert ;

Kim, Han-Jun ;

Kwon, Ohseung ;

Luo, Hao ;

Maltabes, John ;

Mei, Ping ;

Perlov, Craig ;

Rudin, John C. ;

Smith, Mark ;

Trovinger, Steven ;

Zhao, Lihua ;

Taussig, Carl P. .

HP Laboratories Technical Report, 2012, (66)

[47] Effects of a-Si:H layer thicknesses on the performance of a-Si:H/c-Si heterojunction solar cells [J].

Fujiwara, Hiroyuki ;

Kondo, Michio .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)

[48] Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses [J].

Hu, Zhijin ;

Liao, Congwei ;

Li, Wenjie ;

Zeng, Limei ;

Lee, Chang-Yeh ;

Zhang, Shengdong .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (12) :4044-4050

[49] A new decoder-type integrated gate driver with a-Si:H TFTs for active-matrix displays [J].

Kim, Jong-Seok ;

Choi, Byong-Deok .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (03)

[50] Low temperature a-Si:H TFTs with a SiO2 gate insulator deposited by liquid phase deposition [J].

Cross, RBM ;

Oxley, DP ;

Manhas, M ;

Narayanan, EMS .

AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 :697-702

← 1 2 3 4 5 →