Effects of SiNx passivation and gate metal roughness on the performance of on-plastic a-Si: H TFTs

被引：3
|
作者：
Chen, Jian Z. [1 ,2 ]
Cherenack, K. [1 ]
Tsay, C. [1 ]
Cheng, I-Chun [1 ,3 ,4 ]
Wagner, Sigurd [1 ]
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Natl Taiwan Univ, Inst Appl Math, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[4] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 02期
关键词：
D O I：
10.1149/1.2812443
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We studied a-Si: H thin film transistors (TFTs) with gate metal/substrate combinations, including Cr or Al/Cr gate metal on plain Kapton, and Cr/Al/Cr on SiNx passivated Kapton, to identify effects of roughness on TFT performance. TFTs with Cr/Al/Cr on SiNx passivated Kapton are superior in the essential characteristics: low threshold voltage, low gate leakage current I-gs, high on-current, high field-effect mobility, and steep subthreshold slope. The off-current is comparable to those of TFTs on plain Kapton. The Igs of all TFTs rises with increasing surface roughness of the gate metal. The major contributor to roughness is the metal film itself, not the substrate. (c) 2007 The Electrochemical Society.
引用
收藏
页码：H26 / H28
页数：3
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