Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application

被引：52

作者：

Balasubramani, V ^{[1
]}

Chandrasekaran, J. ^{[1
]}

Manikandan, V ^{[2
]}

Le, Top Khac ^{[3
,4
]}

Marnadu, R. ^{[1
]}

Vivek, P. ^{[1
]}

机构：

[1] Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Coimbatore 641020, Tamil Nadu, India

[2] Kongunadu Arts & Sci Coll, Coimbatore 641029, Tamil Nadu, India

[3] Univ Ulsan, Dept Phys, Ulsan 44610, South Korea

[4] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2021年 / 301卷

关键词：

Schottky diode; Rare earth; Vanadium pentoxide (V2O5); Thin films; Photodiode; MIS; ELECTRICAL-PROPERTIES; TEMPERATURE; NANORODS; IMPACT; GROWTH; PHOTODETECTORS; PHOTORESPONSE; NANOPARTICLES; TRANSITION; CATALYST;

D O I：

10.1016/j.jssc.2021.122289

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

In this study, rare earth ytterbium (Yb)-doped V2O5 thin films were effectively coated on glass and Si substrates by the sol-gel method combined with the spin coating method. The films' structural, morphological, optical, and electrical properties were investigated through XRD, FESEM, UV-Vis, and I-V electrical conductivity. Doping on V2O5 with low Yb content of 2, 4, and 6 wt % have highly affected the lattice, which is shown in tetragonal and orthorhombic structures. Morphological studies show nanorods like structured. The coated thin films yield bandgap of 3.23-3.31 eV. The electrical properties of Cu/Yb@V2O5/n-Si type Schottky barrier diode were studied, and calculated photodiode parameters like photosensitivity, photo-responsivity, external quantum efficiency, and detectivity. Predominantly, high photosensitivity of 5545.70% is obtained for the diode with 2 wt % Yb@V2O5.

引用

页数：10

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