Decrease in crystallization temperature of β-Ga2O3 in nanowire structure

被引：2

作者：

Mukai, Kohki ^{[1
]}

Hirota, Keishiro ^{[1
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Engn Sci, Hodogaya Ku, 79-5 Tokiwadai, Yokohama, Kanagawa 2408501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / 06期

基金：

日本学术振兴会;

关键词：

nanowire; Ga2O3; phase transition; synthesis; TG-DTA; GALLIUM OXIDE; SINGLE-CRYSTALS; GROWTH;

D O I：

10.35848/1347-4065/ac6a34

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found that Ga2O3 nanowires (NWs) become beta-type at about 600 degrees C, which is much lower than 900 degrees C known for bulk and thin films. The raw NWs were chemically synthesized at 70 degrees C in a flask. When the NWs were heat-treated at 400 degrees C or lower, epsilon-Ga2O3 was formed, and when heat-treated at 600 degrees C or higher, beta-Ga2O3 was formed. The phase transition from epsilon-type to beta-type occurred at around 500 degrees C during the temperature rise. Chemical synthesis and heat treatment was found to be low-cost methods for producing beta-Ga2O3 NWs, which is expected to be applied to high-speed transistors and high-efficiency sensors.

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页数：3

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