Effects of donor doping on microstructure and electrical properties of bismuth layer-structured Bi4Ti3O12 ceramics

被引：4

作者：

Zhang, L ^{[1
]}

Zhao, SC ^{[1
]}

Zheng, LY ^{[1
]}

Li, GR ^{[1
]}

Yin, QR ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2 | 2005年 / 280-283卷

关键词：

Bi4Ti3O12; ceramics; donor doping; electrical conductivity; piezoelectric properties;

D O I：

10.4028/www.scientific.net/KEM.280-283.259

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A study was conducted on the effects of donor dopants, Nb2O5 and WO3, on microstructure and electric properties of Bi4Ti3O12 (BIT) ceramics. X-ray diffraction patterns of the materials showed a single orthorhombic phase structure. The microstructure results revealed the appearance of plate-like grain. The donor doping decreased the conductivity of BIT by as much as 3 orders of magnitude. The dielectric and ferroelectric properties of doped-BIT materials were also investigated. The decrease in the electrical conductivity allowed the doped samples to be poled. to develop piezoelectricity. Thermal annealing studies of the samples indicated the donor-doped BIT were suitable candidate materials for high-temperature piezoelectric applications.

引用

页码：259 / 262

页数：4

共 10 条

[1]

AURIVILLIUS B, 1949, ARK KEMI, V0001

[2] ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS [J].