CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

被引：185
作者：
Van Hove, Marleen [1 ]
Boulay, Sanae [2 ]
Bahl, Sandeep R. [3 ]
Stoffels, Steve [1 ]
Kang, Xuanwu [1 ]
Wellekens, Dirk [1 ]
Geens, Karen [1 ]
Delabie, Annelies [1 ]
Decoutere, Stefaan [1 ]
机构：
[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium
[2] Holst Ctr, NL-5656 Eindhoven, Netherlands
[3] Texas Instruments Inc, Santa Clara, CA 95052 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 05期
关键词：
Au free; GaN on Si; gate dielectric; high voltage; metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT); ULTRATHIN AL2O3/SI3N4 BILAYER; TRANSISTORS; SI3N4;
D O I：
10.1109/LED.2012.2188016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. The process starts from a 150-mm GaN-on-Si substrate with an embedded Si3N4/Al2O3 bilayer gate dielectric, encapsulated by a high-temperature low-pressure chemical vapor deposited nitride layer. Power devices with a 20-mm gate width reach a maximum output current of 8 A, a breakdown voltage of 750 V, and a specific ON-resistance R-on,(sp) of 2.9 m Omega . cm(2). The OFF-state drain leakage at 600 V is 7 mu A. We show robust gate dielectrics with a large gate bias swing.
引用
收藏
页码：667 / 669
页数：3
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