Thermal stability of CeO2/ZrO2 multilayer thin films prepared by pulsed laser deposition

被引：5

作者：

Balakrishnan, G. ^{[2
,3
]}

Kuppusami, P. ^{[1
]}

Murugesan, S. ^{[1
]}

Ghosh, Chanchal ^{[1
]}

Ramachandran, Divakar ^{[1
]}

Mohandas, E. ^{[1
]}

Sastikumar, D. ^{[2
]}

机构：

[1] Indira Gandhi Ctr Atom Res, Phys Met Grp, Mat Synth & Struct Characterisat Sect, Kalpakkam 603102, Tamil Nadu, India

[2] Natl Inst Technol, Dept Phys, Tiruchirappalli 620015, Tamil Nadu, India

[3] PERI Inst Technol, Dept Phys, Madras 600048, Tamil Nadu, India

来源：

TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS | 2011年 / 64卷 / 03期

关键词：

oxides; thin films; multilayers; pulsed laser deposition; thermal expansion; high temperature x-ray diffraction; ZIRCONIA; COMPOSITE;

D O I：

10.1007/s12666-011-0060-2

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Multilayers of CeO2/ZrO2 thin films were deposited on Si (100) substrates using pulsed laser deposition at an optimized oxygen partial pressure of 3x10(-2) mbar and at room temperature. The CeO2 layer thickness was 10 nm, while the ZrO2 layer thickness was varied as 10, 20 and 30 nm. CeO2 and ZrO2 layers were deposited alternately to obtain 25 bilayers. High temperature x-ray diffraction (HTXRD) results showed that the multilayer films had cubic ceria and tetragonal ZrO2. Thermal expansion coefficients were calculated for CeO2 and t-ZrO2 and found to increase with the decrease of ZrO2 layer thickness. The cross sectional transmission electron microscopy (XTEM) of CeO2/ZrO2 multilayer also indicated that ceria was found to be in cubic phase while zirconia contained predominantly tetragonal phase along with cubic phase in thermally annealed specimen.

引用

页码：297 / 299

页数：3

共 50 条

[41] Structure of ZrO2 optical thin films prepared by dual ion beam reactive sputter deposition [J].

Riviere, JP ;

Harel, S ;

Guerin, P ;

Straboni, A .

SURFACE & COATINGS TECHNOLOGY, 1996, 84 (1-3) :470-475

[42] GROWTH OF CEO2 THIN-FILMS BY LASER ABLATION [J].

AMIRHAGHI, S ;

BEECH, F ;

VICKERS, M ;

BARNES, P ;

TARLING, S ;

BOYD, IW .

ELECTRONICS LETTERS, 1991, 27 (25) :2304-2305

[43] Superconducting YNi2B2C thin films prepared by pulsed laser deposition [J].

Hase, K ;

Holzapfel, B ;

Schultz, L .

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 1997, 288 (1-2) :28-32

[44] Synthesis and Properties of Ceria Thin Films Prepared by Pulsed Laser Deposition [J].

Balakrishnan, G. ;

Kuppusami, P. ;

Sairam, T. N. ;

Thirumurugesan, R. ;

Mohandas, E. ;

Sastikumar, D. .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (09) :5421-5424

[45] Phase evolution in zirconia thin films prepared by pulsed laser deposition [J].

Mishra, Maneesha ;

Kuppusami, P. ;

Singh, Akash ;

Ramya, S. ;

Sivasubramanian, V. ;

Mohandas, E. .

APPLIED SURFACE SCIENCE, 2012, 258 (12) :5157-5165

[46] CeO2 thin film as a lithium-ion-storage material fabricated by pulsed laser deposition [J].

Jiang, LZ ;

Zhou, MF ;

Liu, XN ;

Qin, QZ .

ACTA PHYSICO-CHIMICA SINICA, 1999, 15 (08) :752-756

[47] ZrO2-Modified LiMn2O4 Thin-Film Cathodes Prepared by Pulsed Laser Deposition [J].

Shin, Dong Wook ;

Choi, Ji-Won ;

Ahn, Jae-Pyoung ;

Choi, Won-Kook ;

Cho, Yong Soo ;

Yoon, Seok-Jin .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (05) :A567-A570

[48] Hydrogen doping of MgO thin films prepared by pulsed laser deposition [J].

Kodu, M. ;

Aints, M. ;

Avarmaa, T. ;

Denks, V. ;

Feldbach, E. ;

Jaaniso, R. ;

Kirm, M. ;

Maaroos, A. ;

Raud, J. .

APPLIED SURFACE SCIENCE, 2011, 257 (12) :5328-5331

[49] Transparent conductive CuI thin films prepared by pulsed laser deposition [J].

Zhu, B. L. ;

Zhao, X. Z. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (01) :91-96

[50] Luminescent properties of GaN thin films prepared by pulsed laser deposition [J].

Cazzanelli, M ;

Vinegoni, C ;

Cole, D ;

Lunney, JG ;

Middleton, PG ;

Trager-Cowan, C ;

O'Donnell, KP ;

Pavesi, L .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3) :137-140

← 1 2 3 4 5 →