Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method

被引：1

作者：

El Ouchdi, A. A. ^{[1
,2
]}

Bouazza, B. ^{[1
]}

Belhadji, Y. ^{[1
,3
]}

Massoum, N. ^{[1
]}

机构：

[1] Abou Bakr Belkaid Univ, Res Unit Mat & Renewable Energies, Tilimsen, Algeria

[2] Ctr Dev Technol Avancees, Div Microelect & Nanotechnol, Algiers, Algeria

[3] Univ Tiaret, Fac Sci Appl, Elect & Engn Dept, Tiaret, Algeria

来源：

SEMICONDUCTORS | 2017年 / 51卷 / 12期

关键词：

NANOWIRES;

D O I：

10.1134/S1063782617120053

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This work addresses the issue related to the electronic transport in the III-V ternary material Ga(0.5)ln(0.5)Sb using Monte Carlo method. We investigated the electronic motion in the three valleys I", L, and X of the conduction band. These three valleys are isotropic, non-parabolic and centred on the first Brillouin zone. In our study, we included scatterings with ionised impurities, acoustic and polar optical phonons, as well as, intervalley and intravalley interactions. We discussed the electronic transport characteristics at the stationary and the transient regimes in function of temperature and electric field.

引用

页码：1588 / 1591

页数：4

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