Quantitative scanning capacitance spectroscopy on GaAs and InAs quantum dots

被引：7

作者：

Brezna, W ^{[1
]}

Roch, T ^{[1
]}

Strasser, G ^{[1
]}

Smoliner, J ^{[1
]}

机构：

[1] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 09期

关键词：

D O I：

10.1088/0268-1242/20/9/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, quantitative scanning capacitance spectroscopy studies on bulk GaAs samples and InAs quantum dots are carried out in an ambient atmosphere. The experimental results are described by a simple spherical capacitor model, and the corresponding barrier heights and sample dopings are determined. We further find a strong dependence of the C(V) data on the applied tip force. The barrier height decreases significantly with increasing pressure.

引用

页码：903 / 907

页数：5

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