Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

被引：3

作者：

Sancho-Juan, O. ^{[1
]}

Martinez-Criado, O. ^{[2
]}

Cantarero, A. ^{[1
]}

Garro, N. ^{[1
]}

Salome, M. ^{[2
]}

Susini, J. ^{[2
]}

Olguin, D. ^{[3
]}

Dhar, S. ^{[4
]}

Ploog, K. ^{[4
]}

机构：

[1] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain

[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[3] Ctr Invest Estudies Arauzados, Dept Fis, Mexico City 07300, DF, Mexico

[4] Paul Drude Inst, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 17期

关键词：

LOCAL-STRUCTURE; DOPED GAN; SEMICONDUCTORS; FERROMAGNETISM; SPECTROSCOPY; GAMNN; EDGE; TRANSITION; GROWTH;

D O I：

10.1103/PhysRevB.83.172103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the local atomic structure of highly homogeneous Ga1-xMnxN alloy films (0.03 < x < 0.09) is analyzed by means of Mn and Ga K-edge extended x-ray absorption fine structure measurements. From the curve fitting, the structural parameters corresponding to the first two atomic shells surrounding both Ga and Mn atoms are reported. In the Ga1-xMnxN films, grown by molecular beam epitaxy, the Mn atoms are in tetrahedral configuration, independent of the Mn concentration; that is, they are in a substitutional site, Mn-Ga, in the wurtzite structure. A small increase in the interatomic distances has been found with increasing Mn content. The Debye-Waller factor does not show a significant trend as Mn content increases, which suggests the presence of short-range disorder in the GaN lattice. Ab initio calculations of the structural parameter for two different Mn concentrations are consistent with the experimental results.

引用

页数：4

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