Transparent conductive Ga-doped ZnO/Cu multilayers prepared on polymer substrates at room temperature

被引:46
作者
Gong, Li [1 ,2 ]
Lu, Jianguo [1 ]
Ye, Zhizhen [1 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Changsha Univ Sci & Technol, Coll Mat Sci & Engn, Changsha 410015, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
Zinc oxide; Multilayer; Magnetron sputtering; Transparent conductive oxides; Polycarbonate; OPTICAL-PROPERTIES; THIN-FILMS; DEPENDENCE; THICKNESS; GROWTH; ELECTRODE; PRESSURE; LAYERS;
D O I
10.1016/j.solmat.2011.02.004
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In order to improve the transparency and durability of the Cu films deposited on polycarbonate (PC) substrates, a Ga-doped ZnO (GZO) layer could be deposited directly onto the Cu film. Compared with a single-layered GZO film, the GZO/Cu multilayer coatings have much lower sheet resistance and much thinner thickness. In our work, GZO/Cu multilayers were deposited by magnetron sputtering on PC substrates at room temperature. The structural, electrical, and optical properties of multilayers were investigated at various thicknesses of the Cu and GZO layers. As the Cu layer thickness increases, the resistivity decreases. As the GZO layer thickness increases, the resistivity increases. And we obtained that the transmittance of the GZO/Cu multilayer coatings was higher than that of the single Cu layer. The lowest resistivity of 5.7 x 10(-5) Omega cm with a carrier concentration of 3.25 x 10(22) cm(-3) was obtained at the optimum Cu (12 nm) and GZO (10 nm) layer thickness. The best figure of merit phi(TC) is 4.66 x 10(-3) Omega(-1) the GZO(30 nm)/Cu(12 nm) multilayer. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1826 / 1830
页数:5
相关论文
共 40 条
[1]   Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature [J].
Assunçao, V ;
Fortunato, E ;
Marques, A ;
Aguas, H ;
Ferreira, I ;
Costa, MEV ;
Martins, R .
THIN SOLID FILMS, 2003, 427 (1-2) :401-405
[2]   New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering [J].
Assunçao, V ;
Fortunato, E ;
Marques, A ;
Gonçalves, A ;
Ferreira, I ;
Aguas, H ;
Martins, R .
THIN SOLID FILMS, 2003, 442 (1-2) :102-106
[3]   Metal-like conductivity in transparent Al:ZnO films [J].
Bamiduro, O. ;
Mustafa, H. ;
Mundle, R. ;
Konda, R. B. ;
Pradhan, A. K. .
APPLIED PHYSICS LETTERS, 2007, 90 (25)
[4]   Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO [J].
Bhosle, V ;
Tiwari, A ;
Narayan, J .
APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3
[5]  
CAIRNS DR, 2001, SID 01, P654
[6]   OPTICAL PROPERTIES OF AG AND CU [J].
EHRENREICH, H ;
PHILIPP, HR .
PHYSICAL REVIEW, 1962, 128 (04) :1622-+
[7]   Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications [J].
Fernandez, S. ;
Naranjo, F. B. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (02) :157-163
[8]   Growth of ZnO:Ga thin films at room temperature on polymeric substrates:: thickness dependence [J].
Fortunato, E ;
Gonçalves, A ;
Assunçao, V ;
Marques, A ;
Aguas, H ;
Pereira, L ;
Ferreira, I ;
Martins, R .
THIN SOLID FILMS, 2003, 442 (1-2) :121-126
[9]   Transparent, conductive ZnO:Al thin film deposited on polymer substrates by RF magnetron sputtering [J].
Fortunato, E ;
Nunes, P ;
Marques, A ;
Costa, D ;
Aguas, H ;
Ferreira, I ;
Costa, MEV ;
Godinho, MH ;
Almeida, PL ;
Borges, JP ;
Martins, R .
SURFACE & COATINGS TECHNOLOGY, 2002, 151 :247-251
[10]   Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering [J].
Gong, Li ;
Lu, Jianguo ;
Ye, Zhizhen .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (07) :1282-1285