Nanoimprinted ZnO and ZnO Quantum Dots Embedded SiO2 Layers for Inverted Bulk Heterojunction Solar Cells

被引：6

作者：

Yang, Hwa-Young ^{[1
,2
]}

Ahmad, Rafiq ^{[1
,2
]}

Vaseem, Mohammad ^{[1
,2
]}

Rho, Won-Yeop ^{[1
,2
]}

Tripathy, Nirmalya ^{[3
,4
]}

Choi, Dae-Geun ^{[5
]}

Hahn, Yoon-Bong ^{[1
,2
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Nanomat Proc Res Ctr, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea

[4] Chonbuk Natl Univ, Polymer BIN Res Ctr, Jeonju 561756, South Korea

[5] Korea Inst Machinery & Mat, Dept Nano Mfg Technol, Taejon 305343, South Korea

来源：

SCIENCE OF ADVANCED MATERIALS | 2015年 / 7卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Nanoimprint Lithography; ZnO Layer; Hybrid Solar Cell; ZnO QDs; Silica Nanosphere; PHOTOVOLTAIC PERFORMANCE;

D O I：

10.1166/sam.2015.2034

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Inverted bulk heterojunction (BHJ) solar cells have received much interest due to their stability and lifetime. The inverted bulk heterojunction solar cells are fabricated based on poly(3-hexylthiophene (P3HT)) and Phenyl-C61-butyric acid methyl ester (PCBM). Proper engineering of nanostructures can enhance the adsorption of the sunlight in solar cells. Here, we used nanoimprint lithography technique to form nanoimprinted ZnO (NI-ZnO) or ZnO quantum dots-embedded SiO2 nanoparticles (NI-SiO2@ZnO) layers on ITO substrates. The nanoimprinted layer not only provides ideal scattering characteristics for optimum light trapping, but also acts as electron transport layer. Compared to the power conversion efficiency (PCE) of 1.83% with plain ZnO layer, the devices with NI-ZnO and NI-SiO2@ZnO layers resulted in higher PCEs of 2.35% and 2.94%, respectively.

引用

页码：1253 / 1257

页数：5

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