Effect of Al Concentration in AlGaAs Oxide Mask Pattern on Faceting Kinetics during Selective Area Growth of GaAs by Molecular Beam Epitaxy

被引：0
作者：
Matsuda, Kazuhiro [1 ]
Hayashi, Shota [1 ]
Ushio, Shoji [1 ]
Kaneko, Tadaaki [1 ]
机构：
[1] Kwansei Gakuin Univ, Dept Phys, Sch Sci & Technol, Sanda, Hyogo 6691337, Japan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 04期
关键词：
EQUILIBRIUM CRYSTAL SHAPE; LOW-INDEX SURFACES; ALPHA-AL2O3; NANOSCALE;
D O I：
10.1143/APEX.4.045601
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An oxidized AlGaAs layer is used as an inorganic negative resist for low-energy electron-beam lithography. The patterned oxide can function as an ultrathin template for selectively growing GaAs mesa structures having side facets vertical to a GaAs(001) substrate by molecular beam epitaxy. With increase in the Al concentration in the oxide, the geometric shape of the structures with lateral growth on the oxide surface changes from triangular to pentagonal. This change is explained by a minimization effect of the total surface energy of the structure, including the interfacial energy between the lateral growth region and the patterned oxide mask. (C) 2011 The Japan Society of Applied Physics
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