Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

被引：19

作者：

Muzykov, Peter G. ^{[1
]}

Krishna, Ramesh ^{[1
]}

Das, Sandip ^{[1
]}

Hayes, Timothy ^{[1
]}

Sudarshan, Tangali S. ^{[1
]}

Mandal, Krishna C. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

MATERIALS LETTERS | 2011年 / 65卷 / 05期

关键词：

Electron beam induced current EBIC; Silicon carbide; Semi-insulating; KOH etching; Dislocations; GROWTH;

D O I：

10.1016/j.matlet.2010.11.074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we demonstrate the electron beam induced current (EBIC) contrast of dislocations in semi-insulating (SI) bulk SIC single crystals. Our investigations revealed that the screw dislocations produce dark ERIC contrast indicating high leakage current in the defective regions. This type of screw dislocations are harmful for high resolution radiation detectors and should be eliminated by improving the crystal qualities. Chemical etching in molten KOH was used for dislocation mapping in the test structures and to correlate EBIC contrast with dislocations. The ERIC contrast found in our study in SI SIC is discussed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：911 / 914

页数：4

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