Topological phase transition at the interface of a topological with a conventional insulator

被引:0
作者
Aryal, Niraj [1 ,2 ]
Manousakis, Efstratios [1 ,2 ,3 ]
机构
[1] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA
[3] Univ Athens, Dept Phys, Athens 15784, Greece
关键词
topological insulator; interface of topological insulators; edge states; topological surface states; SINGLE DIRAC CONE; BI2SE3;
D O I
10.1088/1361-648X/ab70c2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the topological states which appear at the interface between a topological insulator (TI) and a conventional insulator (CI) using effective Hamiltonians which accurately describe the band structure of the Bi2Se3 family. Due to the hybridization between the TI and the CI states, the band-gap that appears in the interface Dirac cone decreases and ultimately vanishes by tuning the interface-hopping amplitude or by selecting a CI of appropriate band effective mass. More importantly, we find that a topologically trivial TI slab can be made non-trivial and vice-versa by tuning of such an interface-hopping amplitude or by tuning the CI band effective-mass; namely, a topological phase transition can be induced in such heterostructures indicated by the presence or absence of gapless linear edge modes. We discuss the relevance and realization of our results and conclusions in future experiments.
引用
收藏
页数:11
相关论文
共 30 条
[1]   Nanoscale control of an interfacial metal-insulator transition at room temperature [J].
Cen, C. ;
Thiel, S. ;
Hammerl, G. ;
Schneider, C. W. ;
Andersen, K. E. ;
Hellberg, C. S. ;
Mannhart, J. ;
Levy, J. .
NATURE MATERIALS, 2008, 7 (04) :298-302
[2]   Closing the Surface Bandgap in Thin Bi2Se3/Graphene Heterostructures [J].
Chae, Jimin ;
Kang, Seoung-Hun ;
Park, Sang Han ;
Park, Hanbum ;
Jeong, Kwangsik ;
Kim, Tae Hyeon ;
Hong, Seok-Bo ;
Kim, Keun Su ;
Kwon, Young-Kyun ;
Kim, Jeong Won ;
Cho, Mann-Ho .
ACS NANO, 2019, 13 (04) :3931-3939
[3]   Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures [J].
Chang, Cui-Zu ;
Tang, Peizhe ;
Feng, Xiao ;
Li, Kang ;
Ma, Xu-Cun ;
Duan, Wenhui ;
He, Ke ;
Xue, Qi-Kun .
PHYSICAL REVIEW LETTERS, 2015, 115 (13)
[4]   Edge states of a three-dimensional topological insulator [J].
Deb, Oindrila ;
Soori, Abhiram ;
Sen, Diptiman .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (31)
[5]   Boundary conditions and surface state spectra in topological insulators [J].
Enaldiev, V. V. ;
Zagorodnev, I. V. ;
Volkov, V. A. .
JETP LETTERS, 2015, 101 (02) :89-96
[6]   Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures [J].
Eschbach, Markus ;
Mlynczak, Ewa ;
Kellner, Jens ;
Kampmeier, Joern ;
Lanius, Martin ;
Neumann, Elmar ;
Weyrich, Christian ;
Gehlmann, Mathias ;
Gospodaric, Pika ;
Doering, Sven ;
Mussler, Gregor ;
Demarina, Nataliya ;
Luysberg, Martina ;
Bihlmayer, Gustav ;
Schaepers, Thomas ;
Plucinski, Lukasz ;
Bluegel, Stefan ;
Morgenstern, Markus ;
Schneider, Claus M. ;
Gruetzmacher, Detlev .
NATURE COMMUNICATIONS, 2015, 6
[7]   Topological states of nanoscale Bi2Se3 interfaced with AlN [J].
Freitas, Walter A. ;
Fazzio, A. ;
Schmidt, Tome M. .
APPLIED PHYSICS LETTERS, 2016, 109 (13)
[8]   Topological insulators with inversion symmetry [J].
Fu, Liang ;
Kane, C. L. .
PHYSICAL REVIEW B, 2007, 76 (04)
[9]   Superconducting proximity effect and Majorana fermions at the surface of a topological insulator [J].
Fu, Liang ;
Kane, C. L. .
PHYSICAL REVIEW LETTERS, 2008, 100 (09)
[10]   Colloquium: Topological insulators [J].
Hasan, M. Z. ;
Kane, C. L. .
REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067