Growth of two-dimensional materials on hexagonal boron nitride (h-BN)

被引：22

作者：

Wang, Xinsheng ^{[1
]}

Hossein, Mongur ^{[1
,2
]}

Wei, Zhongming ^{[2
,3
]}

Xie, Liming ^{[1
,2
]}

机构：

[1] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

NANOTECHNOLOGY | 2019年 / 30卷 / 03期

关键词：

two-dimensional material; boron nitride; chemical vapor deposition; transition metal dichalcogenides; molecular beam epitaxy; CHEMICAL-VAPOR-DEPOSITION; THERMAL-EXPANSION COEFFICIENT; LARGE-AREA; EPITAXIAL-GROWTH; CVD GROWTH; FEW-LAYER; MOLECULAR-CRYSTALS; MONO LAYER; MONOLAYER; MOS2;

D O I：

10.1088/1361-6528/aaeb70

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

With its atomically smooth surface yet no dangling bond, chemical inertness and high temperature sustainability, the insulating hexagonal boron nitride (h-BN) can be an ideal substrate for two-dimensional (2D) material growth and device measurement. In this review, research progress on the chemical growth of 2D materials on h-BN has been summarized, such as chemical vapor deposition and molecular beam epitaxy of graphene and various transition metal dichalcogenides. Further, stacking of the as-grown 2D materials relative to h-BN, thermal expansion matching between the deposited materials and h-BN, electrical property of 2D materials on h-BN have been discussed in detail.

引用

页数：12

共 108 条

[91] Nanoscale charge transfer and diffusion at the MoS2/SiO2 interface by atomic force microscopy: contact injection versus triboelectrification [J].