Structural and resistance switching properties of ZnO/SrTiO3/GaAs heterostructure grown by laser molecular beam epitaxy

被引：21

作者：

Huang, W. ^{[1
,2
,3
]}

Dai, J. Y. ^{[1
,2
]}

Hao, J. H. ^{[1
,2
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China

[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 16期

基金：

中国国家自然科学基金;

关键词：

ZNO FILMS; OXIDE; GAAS;

D O I：

10.1063/1.3505136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3 (STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50-300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505136]

引用

页数：3

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